Quantum Dots and Dislocations: Dynamics of Materials Defects

Saturday, October 24, 2015 - 2:30pm - 3:10pm
Irene Fonseca (Carnegie-Mellon University)
The formation and assembly patterns of quantum dots have a significant impact on the optoelectronic properties of semiconductors. We will address short time existence for a surface diffusion evolution equation with curvature regularization in the context of epitaxially strained three-dimensional films. We will discuss optimal faceted shapes of quantum dots and wetting in the case in which there are a non-vanishing crystallographic miscut and a lattice incompatibility between the film and the substrate. The nucleation of misfit dislocations will be analyzed.
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